FIN FIELD-EFFECT-TRANSISTOR WITH MULTIPLE FIN HEIGHTS CAPABLE OF MINIMIZING THE SIZES OF THE FIN FIELD-EFFECT-TRANSISTOR

摘要

PURPOSE: A fin field-effect-transistor with multiple fin heights is provided to obtain a high driving current by including the increased width of channels. ;CONSTITUTION: A first pair of shallow trench isolation(STI) regions(30_1) includes a region under a source/drain region. The first pair of STI regions is separated from a semiconductor strip and is adjacently arranged to the semiconductor strip. A first upper side is arranged on the first pair of STI regions. A second pair of STI regions(30_2) is separated by the semiconductor strip and is adjacently arranged to the semiconductor strip. A second upper side, which is higher than the first upper side, is arranged on the second pair of STI regions.;COPYRIGHT KIPO 2011