Improvement in drain-induced-barrier-lowering and on-state current characteristics of bulk Si fin field-effect-transistors using high temperature Phosphorus extension ion implantation

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Improvement in drain-induced-barrier-lowering and on-state current characteristics of bulk Si fin field-effect-transistors using high temperature Phosphorus extension ion implantation

机译：高温磷扩展离子注入改善体硅鳍片场效应晶体管的漏极诱导势垒降低和导通电流特性

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《Solid-State Electronics》 |2019年第2期|58-64|共7页
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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1. Improved on-state resistance with reliable reverse characteristics in 1.2 kV 4H-SiC MOSFET by selective nitrogen implantation assisted current spreading layer [J] . Jang Seung Yup, Kim Jaemoo, Lee Hojung, Japanese journal of applied physics . 2020,第4期

机译：通过选择性氮气注入辅助电流扩展层改善了在1.2 kV 4H-SiC MOSFET中具有可靠的反向特性的导通电阻
2. Effect of supply voltage and body-biasing on single-event transient pulse quenching in bulk fin field-effect-transistor process [J] . Jun-Ting Yu, Shu-Ming Chen, Jian-Jun Chen, 中国物理：英文版 . 2016,第004期

机译：体鳍场效应晶体管工艺中电源电压和偏置对单事件瞬态脉冲猝灭的影响
3. Design Optimization of AlN/GaN-Based Double-Heterojunction Fin-Type High Electron Mobility Transistors for High On-State Current [J] . Kwon Ra Hee, Eun Hye Rim, Seo Jae Hwa, Journal of nanoscience and nanotechnology . 2016,第10期

机译：高通态电流的基于AlN / GaN的双异质结鳍型高电子迁移率晶体管的设计优化
4. A comparison of arsenic and phosphorus extension by Room Temperature and hot ion implantation for NMOS Si bulk-FinFET at N7 (7nm) technology relevant fin dimensions [C] . Sasaki Y., Ritzenthaler R., De Keersgieter A., Symposium on VLSI Technology . 2015

机译：N7（7nm）技术下与鳍尺寸有关的NMOS Si体-FinFET在室温和热离子注入下砷和磷的扩散比较
5. Shear modulus relaxation of bulk metallic glass, palladium nickel phosphorus, near the glass temperature. [D] . Bains, Alijeet Singh. 2004

机译：接近玻璃温度时，块状金属玻璃，钯镍磷的剪切模量松弛。
6. Electrical characteristic fluctuation of 16-nm-gate trapezoidal bulk FinFET devices with fixed top-fin width induced by random discrete dopants [O] . Wen-Tsung Huang, Yiming Li 2015

机译：随机离散掺杂剂引起的具有固定顶鳍宽度的16nm栅极梯形体FinFET器件的电特性波动
7. Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation [O] . Johnson, B.C. (author), Tettamanzi, G.C. (author), Alves, A.D.C. (author), 2010

机译：通过单掺杂注入在纳米级场效应晶体管通道中进行漏极电流调制

Improvement in drain-induced-barrier-lowering and on-state current characteristics of bulk Si fin field-effect-transistors using high temperature Phosphorus extension ion implantation

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