METHODS FOR MAKING OXIDE THIN LAYER TRANSISTOR USING REACTIVE SPUTTERING METHOD

摘要

PURPOSE: a kind of manufacture oxide thin film transistor is provided to form insulating layer by reactive sputtering, to reduce on physical damage to substrate using reactive sputtering. ;CONSTITUTION: source electrode and drain electrode, channel layer (30), gate insulating layer (40), gate electrode (50) are formed on substrate. The substrate includes flexible base board. Insulating layer is patterned. The temperature of substrate is maintained at up to 300& deg; C forms insulating layer during substrate is loaded in the process at room temperature. ;The 2011 of copyright KIPO submissions