首页> 外国专利> CIRCUIT AND A METHOD FOR REPAIRING A SEMICONDUCTOR DEVICE CAPABLE OF REPLACING A BAD THROUGH SILICON VIA USING A REPAIRED THROUGH SILICON VIA WITH AN ADJACENT NUMBER

CIRCUIT AND A METHOD FOR REPAIRING A SEMICONDUCTOR DEVICE CAPABLE OF REPLACING A BAD THROUGH SILICON VIA USING A REPAIRED THROUGH SILICON VIA WITH AN ADJACENT NUMBER

机译:电路和方法,该方法和方法通过使用具有相邻数字的硅通孔来修复能够通过硅通孔替换的半导体器件

摘要

PURPOSE: A circuit and a method for repairing a semiconductor device is provided to select a signal transmitting path capable of replacing a current bad through silicon via by adjusting the input frequency of a test signal. ;CONSTITUTION: A through silicon via includes normal through silicon vias(B, C, E, F) and repaired through silicon vias(A, D). A transmitting part(200) multiplexes input data according to a controlling signal and transmits the multiplexed input data to the through silicon vias. The transmitting part includes a plurality of multiplexers(210 to 260). A receiving part(300) multiplexes signals from the through silicon vias with a second multiplexing rate and generates output data.;COPYRIGHT KIPO 2011
机译:目的:提供一种用于修复半导体器件的电路和方法,以通过调整测试信号的输入频率来选择能够替代通过硅的不良电流的信号传输路径。 ;构成:硅通孔包括普通硅通孔(B,C,E,F)和修复硅通孔(A,D)。发送部分(200)根据控制信号对输入数据进行复用,并将复用后的输入数据发送至硅通孔。发射部分包括多个多路复用器(210至260)。接收部分(300)以第二复用率复用来自硅通孔的信号并生成输出数据。; COPYRIGHT KIPO 2011

著录项

  • 公开/公告号KR20110073945A

    专利类型

  • 公开/公告日2011-06-30

    原文格式PDF

  • 申请/专利权人 HYNIX SEMICONDUCTOR INC.;

    申请/专利号KR20090130756

  • 申请日2009-12-24

  • 分类号H03K19/177;G01R31/28;H01L21/60;

  • 国家 KR

  • 入库时间 2022-08-21 17:51:33

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