首页> 外国专利> WAFER CLEANING DEVICE CAPABLE OF ELIMINATING REACTION BY-PRODUCTS WHICH ARE GENERATED DURING DRY-ETCHING WITHOUT HEATING A WAFER AT A HIGH TEMPERATURE AND A WAFER CLEANING METHOD USING THE SAME

WAFER CLEANING DEVICE CAPABLE OF ELIMINATING REACTION BY-PRODUCTS WHICH ARE GENERATED DURING DRY-ETCHING WITHOUT HEATING A WAFER AT A HIGH TEMPERATURE AND A WAFER CLEANING METHOD USING THE SAME

机译:具有消除高温蚀刻过程中产生的反应副产物而无需加热高温晶片的晶片清洁装置,以及使用该晶片清洁装置的晶片清洁方法

摘要

PURPOSE: A wafer cleaning device and a wafer cleaning method using the same are provided to shorten the manufacturing time of a semiconductor device and increase production. ;CONSTITUTION: An oxide film is formed on a wafer(200). The oxide film is eliminated using HF and NH3 during a dry-cleaning process. Chemicals are sprayed onto the wafer to eliminate reaction by-products, which are generated during the dry-etching process, during a wet-cleaning process.;COPYRIGHT KIPO 2011
机译:目的:提供一种晶片清洁装置和使用该晶片清洁装置的晶片清洁方法,以缩短半导体装置的制造时间并提高产量。 ;组成:在晶片(200)上形成氧化膜。在干洗过程中使用HF和NH3消除了氧化膜。将化学药品喷洒到晶圆上,以消除在干法蚀刻过程,湿法清洁过程中产生的反应副产物。; COPYRIGHT KIPO 2011

著录项

  • 公开/公告号KR20110077604A

    专利类型

  • 公开/公告日2011-07-07

    原文格式PDF

  • 申请/专利权人 HYNIX SEMICONDUCTOR INC.;

    申请/专利号KR20090134230

  • 发明设计人 MOON OK MIN;LEE YOUNG BANG;

    申请日2009-12-30

  • 分类号H01L21/302;

  • 国家 KR

  • 入库时间 2022-08-21 17:51:32

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