PLASMA ETCHING DEVICE AND ETCHING METHOD CAPABLE OF IMPROVING ETCHING UNIFORMITY IN THE CENTER AND OUTSIDE OF A SUBSTRATE

摘要

PURPOSE: A plasma etching device and an etching method are provided to implement a uniform etching by decreasing the density of plasma gas particles supplied to the outer side of the substrate. ;CONSTITUTION: A chamber(110) provides an etching space. An electrostatic chuck(120) is received in a substrate loaded in the chamber. An upper electrode(130) generates plasma by applying a high frequency voltage to the chamber. A gas diffusing ring(170) supplies reactive gas to the chamber. A vacuum pump(150) is connected to the lower side of the chamber to provide vacuum to the chamber.;COPYRIGHT KIPO 2011