ION IMPLANTATION METHOD FOR ADJUSTING BEAM CURRENT DENSITY DISTRIBUTION AND AN ION IMPLANTATION APPARATUS

摘要

PURPOSE: An ion implantation method and an ion implantation apparatus are provided to reduce an ion implantation time by adjusting ion beam current density distribution in an area where ion beams are overlapped.;CONSTITUTION: A plurality of ion beam supply devices(2,12) supplies a plurality of ribbon type ion beams within a process chamber(11). A beam profiler is arranged within the process chamber. The plurality of the ion beam supply devices supplies a first ion beam(6) and a secondary ion beam(16) within a process chamber. A beam current density distribution controlling element is respectively arranged in the ion beam supply devices. The beam current density distribution controlling element adjusts beam current density distribution.;COPYRIGHT KIPO 2012