CONTROL TARGET SETTING METHOD OF THE BEAM CURRENT DENSITY DISTRIBUTION CAPABLE OF SEARCHING AND ADJUSTING CURRENT DENSITY DISTRIBUTION DATA OF ION BEAM AND AN ION IMPLANTATION APPARATUS

摘要

PURPOSE: A control target setting method and an ion implantation apparatus are provided to adjust current density distribution by establishing a target value of beam current density distribution about each ion beam.;CONSTITUTION: An ion implantation apparatus(1) sends back a glass substrates(10) to the inside of a process chamber from a plurality of ion beam feeders. The ion implantation apparatus overlaps an irradiated area by each ribbon type ion beam through the entire surface of the glass substrates. The ion implantation apparatus forms uniform ion implantation amount distribution on the glass substrates. A control device(25) establishes a control target of beam current density distribution using a beam current value by searching control target setting data.;COPYRIGHT KIPO 2012