METHOD OF SETTING ADJUSTMENT TARGET OF BEAM CURRENT DENSITY DISTRIBUTION AND ION IMPLANTER

摘要

PROBLEM TO BE SOLVED: To set an adjustment target of a beam current density distribution in respective ion beams corresponding to an ion implantation condition and to efficiently adjust the beam current density distribution of the respective ion beams, in an ion implanter for carrying a glass substrate in a direction substantially orthogonal to the long side direction of ribbon-like ion beams supplied from each of a plurality of ion beam suppliers into a processing chamber, superimposing irradiation regions by the respective ribbon-like ion beams over the entire surface of the glass substrate and forming a substantially uniform ion implantation amount distribution on the glass substrate.;SOLUTION: On the basis of the ion implantation condition set to the ion implanter, adjustment target setting data are retrieved. When there are the data that coincide with the ion implantation condition in the adjustment target setting data, the adjustment target of the beam current density of at least one of the respective ribbon-like ion beams is set using the value of a beam current read from the adjustment target setting data.;COPYRIGHT: (C)2012,JPO&INPIT