ADJUSTMENT TARGET SETUP METHOD OF BEAM CURRENT DENSITY DISTRIBUTION AND ION IMPLANTING APPARATUS

摘要

The present invention, by conveying a glass substrate in a direction substantially perpendicular to the plurality of long-side direction of the ribbon-shaped ion beam to be supplied into the processing chamber from each of the ion beam source, over the entire surface of the glass substrate, the investigation by the respective ribbon-like ion beam by overlapping the regions to each other, in the ion implantation apparatus for forming a substantially uniform ion dose distribution on the glass substrate, according to the ion implantation conditions, by setting the adjustment target of the beam current density distribution in each of the ion beam, for each ion-beam It is a challenge to efficiently adjust the beam current density distribution. Based on the ion implantation conditions are set in an ion implantation apparatus, to retrieve the target data set adjusted. If there is data that is consistent with the ion implantation conditions in the adjusted target setting data, using a value of a beam current reading the adjustment target of the beam current density of the respective ribbon-like ion beam one or more ribbon-like ion beam of, from the setting adjustment target data set to.