The Method For Fabricating Organic Thin Film Transistor Using Surface Energy Control

摘要

The present invention relates to an organic thin film transistor manufacturing method using surface energy control , the surface of the gate insulating layer by so controlling the energy to change the polarity of the gate insulating layer in the same polarity with the semiconductor channel layer is formed over the semiconductor channel layer on top of the gate insulating layer and in that to grow better . According to the present invention , the gate insulating layer and a semiconductor channel layer of interfacial properties and is improved to be able to minimize the leakage current , as well as high field-effect mobility and a low turn- on voltage of the organic thin film transistors can be implemented with a