A non-volatile floating gate memory cell with floating gates formed in cavities, and array thereof, and method of formation

摘要

non-volatile memory cell having a single crystal semiconductor material such as single crystal silicon of a first conductivity type. The first conductivity type and a second conductivity type formed on the other of the spaced first and second regions of the semiconductor material. The channel region having a first portion and a second portion connecting the first and second regions for the conduction of electric charge. The dielectric is formed over the channel region. A floating gate which is electrically conductive or non-number jeonseongil spaced includes a first portion of the channel region in the dielectric. A first portion of the channel region is adjacent to the first floating gate is substantially triangular shape in the first region. The floating gate is formed in the cavity. The gate electrode is coupled capacitively to the first floating gate, and a second portion of the channel region and is separated. A second portion of the channel region is between the first portion and the second region. Two-way non-volatile memory cells each provided with two floating gate formed in the cavity. Method for producing a non-volatile memory cells and arrays is also disclosed.