the present invention increases the low oxygen melt jangipryang hot zone of the oxygen concentration gradient in the single crystal and method for controlling the initiation . Oxygen concentration gradient control method of a single crystal according to the present invention is a method of growing a single crystal through a solid-liquid interface by raising the seed while rotating the quartz crucible and the seed in an opposite direction to the upper portion after dipping the seed in a semiconductor melt received in a quartz crucible, the method, the quartz crucible in which the melt of jangipryang receiving the melt and the quartz crucible is increased by the increase in contact area in a state, the magnetic field of the vertical component of zero ZGP (Zero Gauss Plane) is a solid-liquid interface based on a 0 to - applying a magnetic field larger soup arranged between 50mm to melt, and the seed rotation rate and crucible rotation speed is higher than the melt jangipryang the control seed and crucible rotation speed prior to increasing the rotational speed, and a melt flow rate of the inert gas gap and the melt jangipryang lower than the flow rate of the control prior to the increase in a melt gap and an inert gas, the chamber pressure is controlled by the melt jangipryang above the chamber prior to increasing the pressure, characterized by controlling the oxygen concentration gradient of the single crystal.
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