non-volatile memory devices , such as device and provide a method for forming an integrated process tool in such a device is the . The method comprises the steps of forming a plasma adjacent to the surface modified by depositing a tunnel oxide layer on a substrate , the tunnel oxide layer by exposing the plasma to the plasma changes the morphology of the surface and the adjacent surface of the tunnel oxide . After nanocrystals are deposited on the surface of the tunnel oxide modified .
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