BiCMOS Device Using Standard CMOS Process And Method of Manufacturing The Same

摘要

PURPOSE: A BiCMOS element and a manufacturing method thereof are provided to manufacture an emitter, a base, and a collector through a standard complementary metal oxide semiconductor process by injecting different kind and concentration of an impurity into a polysilicon pattern of a thin film. CONSTITUTION: An element isolation film(110) is formed on a preset part of a semiconductor substrate(100) for limiting an active area(A). The active area comprises a first MOS transistor area(MOS1) and a second MOS transistor area(MOS2). An emitter is formed on one side of a semiconductor pattern. A collector is formed on the other side of the semiconductor pattern. The emitter and collector have a first conductivity type impurity.