stacking fault nucleation place continuously reducing the lithography method and reduced stacking fault nucleation place, including those which structures

摘要

off-axis with respect to the crystallographic orientation (off-axis) of the surface shape of the silicon carbide substrate having a bearing formed to produce the epitaxial silicon carbide layer . The shapes are non-parallel (that is , inclined or vertical ) to the crystallographic direction in the bearing that comprises at least one of the side walls . Then, the epitaxial silicon carbide layer is grown on the surface of the silicon carbide substrate comprising the shape . Then , the second shape are grown on the first epitaxial layer . The second shape include a minimum of one side wall that is antiparallel orientation with respect to the crystallographic orientation . A second epitaxial silicon carbide layer is grown on the surface of the first epitaxial silicon carbide layer comprising the second shape .