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The Identification, Annihilation, and Suppression Nucleation Sites Responsible for Silicon Epitaxial Stacking Faults

机译：负责硅外延堆垛层错的识别，湮灭和抑制成核点

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G. A. Rozgonyi; R. P. Deysher; C. W. Pearce;
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1. Nucleation and growth of stacking faults in epitaxial silicon during thermal oxidation [J] . Hsieh C. M., Maher D. M. Journal of Applied Physics . 1973,第3期

机译：热氧化过程中外延硅中堆垛层错的成核和生长
2. Nucleation, Growth and Retrogrowth of Oxidation Induced Stacking Faults in Thin Silicon-on-insulator [J] . GILES LUIS FELIPE, KUNII YASUO, IZUMI KATSUTOSHI Journal of Electronic Materials . 1999,第1期

机译：绝缘体上薄硅的氧化诱导堆垛层错的成核，生长和回生
3. Role of Vacancies in the nucleation of Ringlike-patterned Oxidation-induced Stacking Faults In Melt-grown Silicon Crystals [J] . N.I. Puzanov, A.M. Eidenzon Inorganic Materials . 1998,第4期

机译：空位在熔体生长硅晶体中环状图案氧化诱导的堆垛层错成核中的作用
4. FORMATION AND ANNIHILATION OF EPITAXIAL STACKING FAULTS GENERATED FROM PRE-EXISTING NUCLEATION SITES IN SILICON [C] . C. R. Cho, K. Y. Noh, D. H. Lee, International symposium on high purity silicon . 2000

机译：从硅预先存在的成核位点产生的外延堆叠故障的形成和湮灭
5. Nucleation, epitaxial growth, and characterization of beta-silicon carbide thin films on silicon by rapid thermal chemical vapor deposition. [D] . Li, Jiping. 1994

机译：通过快速热化学气相沉积在硅上形成β-碳化硅薄膜的成核，外延生长和表征。
6. Identification of stacking faults in silicon carbide by polarization-resolved second harmonic generation microscopy [O] . Radu Hristu, Stefan G. Stanciu, Denis E. Tranca, -1

机译：极化分辨二次谐波产生显微镜识别碳化硅中的堆垛层错
7. Observations of Stacking Faults in Epitaxial Silicon [O] . Yoshihiro Tsunoda, Hidemaro Araki, Hisashi Seki 1964

机译：外延硅堆叠故障的观察
8. X-Ray Diffuse Scattering Study of the Kinetics of Stacking Fault Growth and Annihilation in Boron-Implanted Silicon. [R] . Patel, J. R. 2002

机译：硼注入硅堆积断层生长和湮灭动力学的X射线漫散射研究。

The Identification, Annihilation, and Suppression Nucleation Sites Responsible for Silicon Epitaxial Stacking Faults

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