A semiconductor device constructed in a crystalline substrate material and having an embedded in-situ doped semiconductor material

摘要

The pn junction of a substrate diode in a complex SOI device is fabricated on the basis of an embedded in-situ doped semiconductor material, thereby achieving better diode characteristics. For example, a silicon / germanium semiconductor material is fabricated in a recess in the substrate material, the size and shape of the recess being selected to avoid undesirable interaction with metal silicide material.