首页> 外国专利> Bracing technology in a contact plane of semiconductor devices by means of the two conductive layers and an insulating distance holder

Bracing technology in a contact plane of semiconductor devices by means of the two conductive layers and an insulating distance holder

机译:通过两个导电层和一个绝缘距离保持器将支撑技术应用于半导体器件的接触平面

摘要

In complex semiconductor components are strain inducing materials with a reduced insulating strength or with a certain conductivity, for example, metal nitrides, and the like in the contact plane, are used in order to the performance of circuit elements of, for example of field effect transistors, to improve. For this purpose, a deformation induzier end material efficiently on the basis of a dielectric layer stack is enclosed, of the prior to the application of the actual dielectric between the layer material is structured, wherein the side wall surfaces areas on the basis of be masked spacer members.
机译:在复杂的半导体组件中,使用绝缘强度降低或具有一定导电性的应变诱导材料,例如接触面中的金属氮化物等,以实现电路元件的性能,例如场效应晶体管,以改善。为此,在将实际的电介质施加到层材料之间之前,将基于电介质叠层的变形工业终端材料有效地封闭,其中侧壁表面的面积基于掩膜间隔构件。

著录项

  • 公开/公告号DE102009043329A1

    专利类型

  • 公开/公告日2011-03-31

    原文格式PDF

  • 申请/专利权人

    申请/专利号DE20091043329

  • 发明设计人

    申请日2009-09-30

  • 分类号H01L21/336;H01L21/283;H01L29/78;H01L29/40;

  • 国家 DE

  • 入库时间 2022-08-21 17:47:42

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