首页> 外国专利> Semiconductor device with an improved contact pin structure and method for producing it places a conductive contact pin in an intermediate insulating film layer and on an insulating layer to insulate semiconductor elements.

Semiconductor device with an improved contact pin structure and method for producing it places a conductive contact pin in an intermediate insulating film layer and on an insulating layer to insulate semiconductor elements.

机译:具有改进的接触销结构的半导体器件及其制造方法将导电接触销放置在中间绝缘膜层中和绝缘层上,以使半导体元件绝缘。

摘要

A conductive contact pin (6A) is placed in an intermediate insulating film layer (30) and on an insulating layer (2) that insulates semiconductor elements on a semiconductor substrate (1). The contact pin makes an electrical contact between two active semiconductor element areas (1A) formed by the insulating layer on different sides.
机译:导电接触销(6A)放置在中间绝缘膜层(30)中和绝缘层(2)上,该绝缘层使半导体衬底(1)上的半导体元件绝缘。接触针在由不同侧上的绝缘层形成的两个有源半导体元件区域(1A)之间进行电接触。

著录项

  • 公开/公告号DE10051599A1

    专利类型

  • 公开/公告日2001-06-28

    原文格式PDF

  • 申请/专利权人 MITSUBISHI DENKI K.K. TOKIO/TOKYO;

    申请/专利号DE2000151599

  • 发明设计人 KOMORI SHIGEKI;

    申请日2000-10-18

  • 分类号H01L27/088;H01L21/8234;

  • 国家 DE

  • 入库时间 2022-08-22 01:09:40

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