首页> 外国专利> Bracing technology in a contact plane of semiconductor devices by means of the two conductive layers and an insulating distance holder in the case of a semiconductor device

Bracing technology in a contact plane of semiconductor devices by means of the two conductive layers and an insulating distance holder in the case of a semiconductor device

机译:在半导体器件的情况下,借助于两个导电层和绝缘距离保持器将支撑技术应用于半导体器件的接触平面

摘要

Semiconductor component with:a contact region of a circuit element, which is formed in a semiconductor region;a material layer stack, which is connected to a part of the contact region is formed, wherein the material layer stack has a first dielectric layer, an on the first dielectric layer strain inducing formed not - insulating material layer and a second dielectric layer, the above the deformation induzier ends not - insulating material layer is formed, wherein said strain inducing not - insulating material layer causes a deformation in the semiconductor region;a dielectric intermediate layer material, which extends over the contact region is formed;a contact element, which extends through the dielectric interlayer material and through an opening which extends in the material layer stack is formed, wherein the contact element establishes a connection to the contact region; anda spacer element, which is formed on side walls of the opening, so that the strain inducing not - insulating material layer is insulated laterally.
机译:半导体元件,其具有:在半导体区域中形成的电路元件的接触区域;形成与所述接触区域的一部分连接的材料层堆叠,其中,所述材料层堆叠具有第一电介质层,在第一介电层形成的非绝缘材料层和第二介电层上,形成上述形变的端部非绝缘材料层,其中,所述应变诱导非绝缘材料层在半导体区域内引起变形。形成在接触区域上延伸的介电中间层材料;形成延伸穿过介电中间层材料并穿过在材料层堆叠中延伸的开口的接触元件,其中接触元件建立与接触的连接地区;隔离元件,其形成在开口的侧壁上,使得不引起应变的绝缘材料层在横向上绝缘。

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