Gas-sensitive field-effect transistor and a process for producing a gas-sensitive field-effect transistor

摘要

It is a gas-sensitive field-effect transistor (100) is proposed which, a semiconductor substrate (138) with a substrate - main surface, wherein the semiconductor substrate (138) a source region (240), a gate region doping (140) and a drain region (310) comprises. Furthermore, the field effect transistor (100) comprises an insulation layer (110), which has a first main surface, which is facing the substrate - main surface and a second principal surface, which is facing away from the substrate - main surface, wherein the insulation layer (110) the substrate - main surface at least partially covers and in the region of the gate region doping (140) an opening or region with reduced layer thickness (135) with inclined side walls (137), and wherein a surface of the opening (135) in the second main surface is greater than an area of the opening (135) in the first main surface. Finally, the field effect transistor (100) comprises a gate electrodes position (155), the at least a partial region of the first main surface of the insulation layer (110), a region of the inclined side walls (137) of the opening (135) as well as a region of the gate region doping (140), wherein the gate electrodes position (155) a material or a structure comprising a change in the electrical properties of the gate electrodes position (155) in contact with a predefined gas acts.