Nanowire useful in photovoltaics and electronics, comprises semiconductor materials and precursors of compounds or mixtures of compounds with a direct silicon-silicon-, germanium-silicon- and/or germanium-germanium-bond

摘要

Nanowire comprises: semiconductor materials; and precursors, which are compounds or mixtures of compounds with at least one direct silicon-silicon-, germanium-silicon- and/or germanium-germanium-bond, whose substituents comprise halogen and/or hydrogen, where the atomic ratio of the substituents and metalloid atoms in their composition is at least 1:1. An independent claim is also included for producing the nanowire, comprising reacting the precursors or the precursors and hydrogen, where a mixing ratio of the precursor and hydrogen is 1:0-1:1000000.