Semiconductor component with contact elements and metal silicide regions which are produced in a common process

摘要

A metal silicide in complex semiconductor components, in a later process step on the basis of contact openings is provided, wherein the deposition of the contact material, for example of tungsten, efficiently is combined with the silicidizing process. In this case, the thermally activated separation process, the formation of a metal silicide in heavily doped semiconductor regions set in motion.