Method for fabricating cellular trench metal oxide semiconductor field effect transistor (MOSFET) in power conversion system, involves titanizing crystally second gate conductor layer to form titanium (Ti)-gate conductor layer

摘要

The method (1100) involves depositing (1110) a first photo resist atop on a first epi layer to pattern a trench area. A second photo resist atop is deposited (1120) on a first gate conductor layer to pattern a mesa area. The first gate conductor layer in the mesa area is etched away (1130) to form a second gate conductor layer with a hump. The second gate conductor layer is titanized (1140) crystally to form a Ti-gate conductor layer. Independent claims are included for the following: (1) cellular trench MOSFET; and (2) power conversion system.