Transistor with embedded si/ge material having enhanced boron confinement

摘要

By incorporating a diffusion hindering species (256A) at the vicinity of PN junctions of P-channel transistors comprising a silicon/germanium alloy, (255) diffusion related non- uniformities of the PN junctions may be reduced, thereby contributing to enhanced device stability and increased overall transistor performance. The diffusion hindering species (256A) may be provided in the form of carbon, nitrogen and the like.