Transistor with embedded si/ge material having enhanced boron confinement

摘要

By combining diffusion barrier substance (256A) in related can unevenly reduce that the p channel transistor of neighbouring PN junction includes silicon/germanium alloy, (255) diffusion PN junction, so as to cause enhancing device stability and enhance the performance of bulk crystal pipe, the advantages that diffusion barrier substance (256A) can provide the carbon of form, nitrogen.