MOS TRANSISTOR INTEGRATED CIRCUIT AND SIMULATING CALCULATION SYSTEM OF DEGRADATION DEGREE OF MOS TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To solve such a problem that a system arranged so as to calculate a degradation degree of a MOS transistor for individual integrated circuit is not in existence up to this time although the quantitative grasp of degradation degree is required, because the degradation occurs in characteristics of the MOS transistor constituting a ring oscillator in a MOS transistor integrated circuit when the use period becomes long, and an oscillation frequency becomes extensive.;SOLUTION: The ring oscillator 4 configured to only occur the degradation of the NMOS transistor and the ring oscillator 5 configured to only occur the degradation of the PMOS transistor are made up in the MOS transistor integrated circuit 1 integrating the ring oscillator 2. The increased delay time due to the degradation or the oscillation period is calculated by a simulating calculation device 7 based on the oscillation period at the present time point or the oscillation period at the beginning of manufacture.;COPYRIGHT: (C)2013,JPO&INPIT