CLEANING LIQUID FOR CMP POLISHING LIQUID, CLEANING METHOD USING THE SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a cleaning liquid for a CMP polishing liquid which suppresses deterioration of a polishing speed and can suppress the occurrence of a polishing scratch, and to provide a cleaning process using the same and a method for manufacturing a semiconductor substrate using the same.;SOLUTION: In the cleaning liquid for the CMP polishing liquid which cleans the feeding device of a CMP polishing liquid and contains a strong acid, the strong acid included in the cleaning liquid for the CMP polishing liquid is at least one compound selected from sulfuric acid, oxalic acid, hypochlorous acid, hydrofluoric acid, nitric acid and hydrochloric acid.;COPYRIGHT: (C)2012,JPO&INPIT