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N-TYPE POLYCRYSTALLINE SILICON WAFER AND N-TYPE POLYCRYSTALLINE SILICON INGOT, AND METHOD OF MANUFACTURING THE SAME
N-TYPE POLYCRYSTALLINE SILICON WAFER AND N-TYPE POLYCRYSTALLINE SILICON INGOT, AND METHOD OF MANUFACTURING THE SAME
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机译:N型多晶硅硅晶片和N型多晶硅硅晶片及其制造方法
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摘要
PROBLEM TO BE SOLVED: To provide a polycrystalline silicon wafer for high-efficiency power generation panels.;SOLUTION: In this method, when a polycrystalline silicon ingot is manufactured by electromagnetic casting, specific resistance is controlled to be not smaller than 1 Ωcm and not greater than 10 Ωcm by continuously or intermittently adding phosphorus in silicon melt liquid. By this invention, since electromagnetic casting in which a dopant can be added continuously or intermittently is used, the specific resistance of the polycrystalline silicon ingot in the direction of crystal axis can be controlled in the range of not smaller than 1 Ωcm and not greater than 10 Ωcm. Since the dopant is phosphorus, an increase in dislocation density by the formation of B-O complex is not observed.;COPYRIGHT: (C)2012,JPO&INPIT
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