N-TYPE POLYCRYSTALLINE SILICON WAFER, N-TYPE POLYCRYSTALLINE SILICON INGOT AND METHOD OF MANUFACTURING SAME

摘要

PROBLEM TO BE SOLVED: To provide a polycrystalline silicon wafer for high-efficiency power generation panels.;SOLUTION: In this method, when a polycrystalline silicon ingot is manufactured by electromagnetic casting, specific resistance is controlled to be not smaller than 1 Ωcm and not greater than 10 Ωcm by continuously or intermittently adding phosphorus in silicon melt liquid. By this invention, since electromagnetic casting in which a dopant can be added continuously or intermittently is used, the specific resistance of the polycrystalline silicon ingot in the direction of crystal axis can be controlled in the range of not smaller than 1 Ωcm and not greater than 10 Ωcm. Since the dopant is phosphorus, an increase in dislocation density by the formation of B-O complex is not observed.;COPYRIGHT: (C)2012,JPO&INPIT