Heterojunctions between polyaniline （PANI） and n-type porous silicon （PS）, Al/PS-PANI/Au cell,were fabricated, and the rectifying parameters of this heterojunction diode were measured as a function of thepreparation conditions of PANI and PS, the electronic structure of PANI as well as cell structure. Therectifying parameters of Al/PS-PANI/Au cell were determined to be γ= 1 .8×101～ 1 .0×105 for the rectifyingratio at 3V, n = 3 ～12 for the ideal factor,j0 = 8.0×10-5～5.6×10-2 mA/cm2 for the reversed saturated currentdensity, and φb = 0.67～ 0.83 V for the barrier height, respectively. The best rectifying heterojunction diodemade between PANI and n-type PS with higher rectifying factor （γ= 1 .0×105 at 3V ）, output current （1500mA/cm2 at 3V） and lower ideal factor （n = 3.3） was obtained by preventing the oxidation of PS beforeevaporating Al electrode.
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