Being the collector - rise heterojunction bipolar transistor and that production

摘要

(57) Abstract Being the collector - rise heterojunction bipolar transistor, it was laminated on the baseplate, it possesses with - emitter layer and - based layer and - collector layer. In the particular transistor, as for the surface area of the based - emitter junction section it is smaller than the surface area of the based - collector territory, the sensitivity for the ion implantation of conductivity of the based layer material is lower than the sensitivity for the same ion implantation of the emitter layer material.