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Being monitor manner in order with the plasma processed system which possesses the monitor mannered null plasma processed

机译:具有等离子处理系统的等离子处理系统具有监控状态

摘要

Actual place monitor method of the process process which is utilized in the plasma processed system which possesses the plasma processed chamber is disclosed. This method includes the step which arranges the baseplate inside the plasma processed chamber. This method when the baseplate is arranged inside the plasma processed chamber, furthermore includes the step which strike processes the plasma inside the plasma processed chamber. This method exists after the plasma strike processing furthermore to include the step which acquires the auto-bias voltage which was measured, the auto-bias voltage which was measured when the plasma does not exist, has 1st value, when the plasma exists, 1st value at least has possessed 2nd it differs value. As for this method the auto-bias voltage value which was measured the setting auto-bias voltage value range if it had come off, furthermore includes the step which correlates the auto-bias voltage value which was measured with the attribute of the process.
机译:公开了在具有等离子体处理室的等离子体处理系统中利用的处理过程的实际位置监视方法。该方法包括将基板布置在等离子体处理室内的步骤。当将基板布置在等离子体处理室内部时,该方法还包括对等离子体处理室内部中的等离子体进行冲击的步骤。该方法还包括在等离子体撞击处理之后的步骤,该步骤包括获取所测量的自动偏置电压的步骤,当不存在等离子体时所测量的自动偏置电压具有第一值,当存在​​等离子体时的第一偏置电压具有第一值。至少拥有第二个差异值。对于该方法,如果测得的自动偏置电压值已经脱离,则在设定的自动偏置电压值范围内进行测量,此外还包括将测得的自动偏置电压值与过程属性相关联的步骤。

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