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A New Methodology for Monitoring and Comparing Edge Exposure and Plasma Charging Current Damage from Plasma Processing

机译：监测和比较等离子处理引起的边缘暴露和等离子充电电流损坏的新方法

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《Next Generation Internet Networks, 2005》|2005年|p.84-86|共3页
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Fonash S.J.; Ozaita M.; Okandan M.; Awadelkarim O.O.; Chan Y.D.;
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中图分类自动化技术、计算机技术;
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机译：使用基于电荷的电容测量来监视等离子过程引起的充电损坏的测试结构
2. Charge injection using gate-induced-drain-leakage current forcharacterization of plasma edge damage in CMOS devices [J] . Brozek T., Rao V.R., Sridharan A., IEEE Transactions on Semiconductor Manufacturing . 1998,第2期

机译：使用栅极感应的漏极泄漏电流进行电荷注入，以表征CMOS器件中的等离子体边缘损坏
3. Charge injection using gate-induced-drain-leakage current for characterization of plasma edge damage in CMOS devices [J] . Brozek T., Rao V.R. IEEE Transactions on Semiconductor Manufacturing . 1998,第2期

机译：使用栅极感应的漏极泄漏电流进行电荷注入，以表征CMOS器件中的等离子体边缘损坏
4. A New Methodology for Monitoring and Comparing Edge Exposure and Plasma Charging Current Damage from Plasma Processing [C] . Fonash, S.J., Ozaita, . 2001

机译：监测和比较等离子处理引起的边缘暴露和等离子充电电流损坏的新方法
5. Charging and vacuum -ultraviolet radiation effects on plasma processing induced damage of semiconductor devices [D] . Cismaru, Cristian 1999

机译：充电和真空紫外线辐射对等离子体处理引起的半导体器件损坏的影响
6. Plasma Charge Current for Controlling and Monitoring Electron Beam Welding with Beam Oscillation [O] . Dmitriy Trushnikov, Vladimir Belenkiy, Valeriy Shchavlev, 2012

机译：等离子体电荷电流用于控制和监视电子束振荡的电子束焊接
7. Charge injection using gate-induced-drain-leakage current for characterization of plasma edge damage in CMOS devices [O] . BROZEK T, RAMGOPAL RAO V, SRIDHARAN A, 1998

机译：使用栅极感应的漏极泄漏电流进行电荷注入，以表征CMOS器件中的等离子体边缘损坏
8. Electron heat transport in current carrying and currentless thermonuclear plasmas. Tokamaks and stellarators compared [R] . Peters, M. 1996

机译：载流和无电流热核等离子体中的电子热传输。托卡马克和仿星器相比

A New Methodology for Monitoring and Comparing Edge Exposure and Plasma Charging Current Damage from Plasma Processing

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