首页> 外国专利> COMPOSITION FOR FORMING THICK FILM CONDUCTOR, THICK FILM CONDUCTOR FORMED BY USING THE SAME, AND CHIP RESISTOR USING THICK FILM CONDUCTOR

COMPOSITION FOR FORMING THICK FILM CONDUCTOR, THICK FILM CONDUCTOR FORMED BY USING THE SAME, AND CHIP RESISTOR USING THICK FILM CONDUCTOR

机译:用于形成厚膜导体的组合物,通过使用相同的薄膜而制成的厚膜导体以及使用厚膜导体的芯片电阻

摘要

PROBLEM TO BE SOLVED: To provide a lead-free composition for forming a thick film conductor which excels in both sulfide resistance and solder resistance at low cost.;SOLUTION: The present invention relates to a composition used for forming a thick film conductor which is used as an electrode of a chip resistor. The composition of the present invention contains Ag powder as conductive powder and SiO2-B2O3-Al2O3-CaO-Li2O-group glass powder and Al2O3 powder as oxide powder, and also has carbon powder added as additive. Per 100 pts.mass of conductive powder, there are included 1-10 pts.mass of the carbon powder, 0.1-15 pts.mass of the glass powder, and 0.1-8 pts.mass of the Al2O3 powder. The composition of the glass powder is SiO2:20-60 mass%, B2O3:2-25 mass%, Al2O3:2-25 mass%, CaO:20-50 mass%, and Li2O:0.5-6 mass%.;COPYRIGHT: (C)2012,JPO&INPIT
机译:解决的问题:提供一种用于形成厚膜导体的无铅组合物,该无铅组合物以低成本同时具有优异的耐硫化物性和耐焊接性。用作片状电阻器的电极。本发明的组合物包含作为导电性粉末的Ag粉和SiO 2 -B 2 O 3 -Al 2 O 3 -CaO-Li 2 O型玻璃粉和Al 2 O 3 粉末作为氧化物粉末,并且还添加了碳粉作为添加剂。每100 pts导电粉质量包括1-10 pts碳粉质量,0.1-15 pts。玻璃粉质量和0.1-8 pts Al 2 O 3 粉末。玻璃粉末的组成为:SiO 2 :20-60质量%,B 2 O 3 :2-25质量%,Al < Sub> 2 O 3 :2-25质量%,CaO:20-50质量%,Li 2 O:0.5-6质量%。版权:(C)2012,JPO&INPIT

著录项

  • 公开/公告号JP2012043622A

    专利类型

  • 公开/公告日2012-03-01

    原文格式PDF

  • 申请/专利权人 SUMITOMO METAL MINING CO LTD;

    申请/专利号JP20100183323

  • 发明设计人 ISHIYAMA NAOKI;AWAGAKUBO SHINGO;

    申请日2010-08-18

  • 分类号H01B1/22;H01B5/14;H01C7/00;

  • 国家 JP

  • 入库时间 2022-08-21 17:40:17

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