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Two-layer membrane for oxidation resistance is good next generation damascene barrier application
Two-layer membrane for oxidation resistance is good next generation damascene barrier application
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机译:两层膜具有良好的抗氧化性,是下一代大马士革阻挡层的良好应用
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摘要
A method is provided for processing a substrate including providing a processing gas comprising an organosilicon compound comprising a phenyl group to the processing chamber, and reacting the processing gas to deposit a low k silicon carbide barrier layer useful as a barrier layer in damascene or dual damascene applications with low k dielectric materials. A method is provided for depositing a silicon carbide cap layer that has substantially no phenyl groups attached to silicon atoms from a processing gas comprising an oxygen-free organosilicon compound on a low k silicon carbide barrier layer.
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