TWO-LAYER FILM FOR NEXT GENERATION DAMASCENE BARRIER APPLICATION WITH GOOD OXIDATION RESISTANCE

摘要

There is provided a kind of method for handling substrate, including it includes phenyl to processing chamber housing that provide processing gas, which include organo-silicon compound, the low k silicon carbide barrier layers of the reactive deposition of the processing gas be used as barrier layer inlay or dual damascene applications in there is k dielectric material. A kind of processing gas by including anaerobic organo-silicon compound of the phenyl not connecting substantially with silicon atom for depositing silicon carbide layers cap is in low k-value silicon carbide barrier layer.