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TWO-LAYER FILM FOR NEXT GENERATION DAMASCENE BARRIER APPLICATION WITH GOOD OXIDATION RESISTANCE
TWO-LAYER FILM FOR NEXT GENERATION DAMASCENE BARRIER APPLICATION WITH GOOD OXIDATION RESISTANCE
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机译:具有良好抗氧化性的新一代纳马屏障的两层膜
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摘要
A method is provided for processing a substrate including providing a processing gas comprising an organosilicon compound comprising a phenyl group to the processing chamber, and reacting the processing gas to deposit a low k silicon carbide barrier layer useful as a barrier layer in damascene or dual damascene applications with low k dielectric materials. A method is provided for depositing a silicon carbide cap layer that has substantially no phenyl groups attached to silicon atoms from a processing gas comprising an oxygen-free organosilicon compound on a low k silicon carbide barrier layer.
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