首页>
外国专利>
Program method used LSB page recovery method in a multi-level cell flash memory, to the method, multi-level flash memory and use that method
Program method used LSB page recovery method in a multi-level cell flash memory, to the method, multi-level flash memory and use that method
展开▼
机译:编程方法是在多层单元闪存中使用LSB页面恢复方法,对该方法,多层闪存并使用该方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
A Least Significant Bit (LSB) page recovery method used in a multi-level cell (MLC) flash memory device includes setting first through nth LSB page groups (n being a natural number that is larger than 2) comprising at least two LSB pages from among the LSB pages included in the MLC flash memory, programming the first through xth LSB pages (x is a natural number that is larger than 2) included in an ith LSB page group (i is a natural number that is smaller than n), generating and storing an ith LSB parity page for the first through xth LSB pages, programming first through xth MSB pages which correspond to one LSB page from among the first through xth LSB pages, and recovering a jth LSB page, which are paired with a jth MSB page, using the ith LSB parity page corresponding to the ith LSB page group, when a power supply to the MLC flash memory is stopped during the programming of the jth MSB page (j is a natural number that is smaller than x).
展开▼