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Manner null of amorphous conversion/the templet re-crystallization which for the hybrid orientation substrate is improved
Manner null of amorphous conversion/the templet re-crystallization which for the hybrid orientation substrate is improved
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机译:改进了混合取向衬底的非晶态转化/模板重结晶的方式
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摘要
The present invention provides an improved amorphization/templated recrystallization (ATR) method for fabricating low-defect-density hybrid orientation substrates. ATR methods for hybrid orientation substrate fabrication generally start with a Si layer having a first orientation bonded to a second Si layer or substrate having a second orientation. Selected regions of the first Si layer are amorphized and then recrystallized into the orientation of the second Si layer by using the second Si layer as a template. In particular, this invention provides a melt-recrystallization ATR method, for use alone or in combination with non-melt-recrystallization ATR methods, in which selected Si regions bounded by dielectric-filled trenches are induced to undergo an orientation change by the steps of preamorphization, laser-induced melting, and corner-defect-free templated recrystallization from the melt.
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