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Substrate processing apparatus, substrate processing method, coating, developing device and storage medium

机译:基板处理设备,基板处理方法,涂层,显影装置和存储介质

摘要

PROBLEM TO BE SOLVED: To provide a substrate processing apparatus capable of uniformly controlling the width of a removing portion on the peripheral edge of a film to be processed which is formed on a substrate over the entire periphery of the substrate.;SOLUTION: The substrate processing apparatus is configured so as to be provided with: a liquid film forming section equipped with an opposite surface portion opposite via a gap to the peripheral edge portion of the rear surface side of the substrate held by a substrate holding section, forming a liquid film in the gap by surface tension and allowing the liquid film to sneak into the front surface from the rear surface of the substrate by a centrifugal force of the substrate to remove the peripheral edge portion of the film to be processed; and a posture control section in which a gas jetting hole and a gas suction hole are provided so as to oppose the rear surface of the substrate closer to the center than the opposite surface portion. Vertical wobbling of the substrate can be prevented by the gas jetting and suction actions, and the height of the peripheral edge portion of the substrate is adjusted depending on the gas jetting amount and suction amount to control the position of sneaking liquid film on the front surface side of the substrate, and the width to be removed of the film to be processed is controlled.;COPYRIGHT: (C)2010,JPO&INPIT
机译:解决的问题:提供一种基板处理设备,该设备能够均匀地控制在基板的整个周边上形成在基板上的被处理膜的周缘上的去除部的宽度。该处理装置构成为具备:液膜形成部,该液膜形成部具备与由基板保持部保持的基板的背面侧的周缘部隔着间隙而相对的相对的表面部,以形成液膜。通过表面张力使间隙进入,并通过基片的离心力使液膜从基片的后表面潜入基片的前表面,以除去要处理的膜的周边部分。姿势控制部,在该姿势控制部中,以相对于基板的背面比对置的面部更靠近中央的方式设置有气体喷出孔和气体吸取孔。可以通过气体的喷射和吸引作用防止基底的垂直摆动,并且根据气体的喷射量和吸引量来调节基底的外围边缘部分的高度,以控制潜液膜在前表面上的位置。基材的一面,并控制要处理的薄膜的要去除的宽度。;版权所有:(C)2010,JPO&INPIT

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