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Self-pulsating semiconductor laser

机译:自脉冲半导体激光器

摘要

PROBLEM TO BE SOLVED: To solve a problem that an element service life of a conventional self-oscillation semiconductor laser is short.;SOLUTION: A nitride light-emitting element comprises: an active layer constituted of a group III nitride semiconductor, a functional layer provided higher than the active layer and including a current constriction or light distribution control function, and an absorption layer provided higher than the functional layer for absorbing light generated in the active layer. The functional layer and the absorption layer include stripe openings. When a transition density in the area of the active layer facing the functional layer is defined as Na, a transition density of the area of the active layer facing the openings is defined as Nb, and a transition density of the area of the absorption layer facing the functional layer is defined as Nc, NaNc and NbNc are established.;COPYRIGHT: (C)2007,JPO&INPIT
机译:解决的问题:为了解决传统的自激振荡半导体激光器的元件寿命短的问题。解决方案:氮化物发光元件包括:由III族氮化物半导体构成的有源层,功能层。吸收层设置成比有源层高并且包括电流限制或光分布控制功能,吸收层设置成比功能层高以吸收在有源层中产生的光。功能层和吸收层包括条纹开口。当活性层面对功能层的区域的过渡密度定义为Na时,活性层面对开口的区域的过渡密度定义为Nb,而吸收层面对功能层的区域的过渡密度定义为Nb。功能层定义为Nc,建立Na

著录项

  • 公开/公告号JP4821390B2

    专利类型

  • 公开/公告日2011-11-24

    原文格式PDF

  • 申请/专利权人 日本電気株式会社;

    申请/专利号JP20060074441

  • 发明设计人 大矢 昌輝;

    申请日2006-03-17

  • 分类号H01S5/343;

  • 国家 JP

  • 入库时间 2022-08-21 17:36:31

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