首页>
外国专利>
High purity Ru powder, sputtering target obtained by sintering the high purity Ru powder, thin film obtained by sputtering the target, and method for producing high purity Ru powder
High purity Ru powder, sputtering target obtained by sintering the high purity Ru powder, thin film obtained by sputtering the target, and method for producing high purity Ru powder
A high purity Ru powder wherein the content of the respective alkali metal elements such as Na and K is 10 wtppm or less, and the content of Al is in the range of 1 to 50 wtppm. Further provided is a manufacturing method of such high purity Ru powder wherein Ru raw material having a purity of 3N (99.9%) or less is used as an anode and electrolytic refining is performed in a solution. Further still, provided is a high purity Ru powder for manufacturing a sputtering target which is capable of reducing harmful substances as much as possible, generates few particles during deposition, has a uniform film thickness distribution, has a purity of 4N (99.99%) or higher, and is suitable in forming a capacitor electrode material of a semiconductor memory; a sputtering target obtained by sintering such high purity Ru powder; a thin film obtained by sputtering this target; and a manufacturing method of the foregoing high purity Ru powder.
展开▼