High purity Ru powder, sputtering target obtained by sintering the high purity Ru powder, thin film obtained by sputtering the target, and method for producing high purity Ru powder

摘要

A high purity Ru powder characterized in that each content of alkali metal elements such as Na and K is 10 wtppm or less and Al content is 1 to 50 wtppm, and a Ru raw material having a purity of 3N (99.9%) or less A method for producing the same high-purity Ru powder, characterized by being purified by electrolysis in a solution as an anode. Reduces harmful substances as much as possible, reduces the number of particles during film formation, has a uniform film thickness distribution, and has a purity of 4N (99.99%) or more, and forms an electrode material for semiconductor memory capacitors A high-purity Ru powder for producing a sputtering target, a sputtering target obtained by sintering the high-purity Ru powder, a thin film obtained by sputtering the target, and a method for producing the high-purity Ru powder are provided. .