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Thin film piezoelectric vibrator and thin film piezoelectric bulk acoustic wave resonator and a high-frequency filter using the same

机译:薄膜压电振动器和薄膜压电体声波谐振器以及使用该压电谐振器的高频滤波器

摘要

PROBLEM TO BE SOLVED: To improve a Q value of resonance characteristics in a wide band resonator capable of controlling a frequency by a shape, and to provide the wide band resonator inexpensively.;SOLUTION: A thin film piezoelectric bulk wave high frequency resonator comprises a laminated structure including a piezoelectric thin film and first and second metal electrode films which exist so as to have the piezoelectric thin film at least partially interposed therebetween, and all of resonance parts and a coupling part are formed on an insulating substrate by a thin film manufacturing device, and the resonance parts oscillate in a Radial Extension mode taking centers as nodes, and piezoelectric thin films of two resonace parts are polarized in a direction perpendicular to film surfaces, and the width of the coupling part is ≤1/4 of the width of the two resonance parts.;COPYRIGHT: (C)2008,JPO&INPIT
机译:要解决的问题:为了改善能够通过形状控制频率的宽带谐振器的谐振特性的Q值,并廉价地提供宽带谐振器。解决方案:薄膜压电体波高频谐振器包括:通过压电薄膜制造在绝缘基板上形成层叠结构,该层叠结构包括压电薄膜以及以至少部分地介于其间的方式存在的第一和第二金属电极膜,并且所有谐振部分和耦合部分都形成在绝缘基板上装置,并且谐振部分以中心为节点以径向扩展模式振荡,并且两个谐振部分的压电薄膜在垂直于膜表面的方向上极化,并且耦合部分的宽度为π的1/4。两个谐振部分的宽度。;版权:(C)2008,JPO&INPIT

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