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INTER-POLY DIELECTRIC IN A SHIELDED GATE MOSFET DEVICE
INTER-POLY DIELECTRIC IN A SHIELDED GATE MOSFET DEVICE
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机译:屏蔽栅极MOSFET器件中的极间电介质
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摘要
In one general aspect, an apparatus can include a shield dielectric disposed within a trench aligned along an axis within an epitaxial layer of a semiconductor, and a shield electrode disposed within the shield dielectric and aligned along the axis. The apparatus can include a first inter-poly dielectric having a portion intersecting a plane orthogonal to the axis where the plane intersects the shield electrode, and a second inter-poly dielectric having a portion intersecting the plane and disposed between the first inter-poly dielectric and the shield electrode. The apparatus can also include a gate dielectric having a portion disposed on the first inter-poly dielectric.
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