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N-TYPE ORGANIC THIN FILM TRANSISTOR, AMBIPOLAR FIELD-EFFECT TRANSISTOR, AND METHOD OF FABRICATING THE SAME
N-TYPE ORGANIC THIN FILM TRANSISTOR, AMBIPOLAR FIELD-EFFECT TRANSISTOR, AND METHOD OF FABRICATING THE SAME
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机译:N型有机薄膜晶体管,两极场效应晶体管及其制造方法
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摘要
An N-type organic thin film transistor, an ambipolar field-effect transistor, and methods of fabricating the same are disclosed. The N-type organic thin film transistor of the present invention comprises: a substrate; a gate electrode locating on the substrate; a gate-insulating layer covering the gate electrode, and the gate-insulating layer is made of silk protein; a buffering layer locating on the gate-insulating layer, and the buffering layer is made of pentacene; an N-type organic semiconductor layer locating on the buffering layer; and a source and a drain electrode, wherein the N-type organic semiconductor layer, the buffering layer, the source and the drain electrode are disposed over the gate dielectric layer.
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