AMBIPOLAR ORGANIC THIN-FILM FIELD-EFFECT TRANSISTOR AND METHOD FOR MAKING THE SAME

摘要

This invention provides a thin film field effect transistor having a metal / insulator / semiconductor structure (MIS), a semiconductor material is an organic compound that forms the layer, the material forming the insulation layer can be dissolved in an organic solvent and an organic compound that exhibits spontaneous polarization similar to ferroelectric, wherein the electric field voltage of more than the withstand voltage of the organic compound for forming the insulator layer When subjected to the polling applied between a source and a gate electrode denotes a transistor characteristic of the n-type, if it is performed in a polling relates to a bipolar organic field effect transistor, characterized in that a thin layer showing a transistor characteristic of the p-type. ; In accordance with the present invention, since the semiconductor layer and the material forming the insulation layer of the organic compound in the organic field effect transistor is typically a characteristic of the n-type it can not be obtained is obtained, both of the p-type and n-type It can be obtained a bipolar organic field effect transistor showing the thin layer transistor characteristics.