METHOD FOR INSPECTING DEFECTS, INSPECTED WAFER OR SEMICONDUCTOR DEVICE MANUFACTURED USING THE SAME, METHOD FOR QUALITY CONTROL OF WAFERS OR SEMICONDUCTOR DEVICES AND DEFECT INSPECTING APPARATUS

摘要

Light from a light source device is polarized through a polarizer and is caused to impinge obliquely onto an object to be inspected. The resulting scattered light is received by a CCD imaging device having an element for separating scattered polarized light disposed in a dark field. Component light intensities are worked out for an obtained P-polarized component image and an obtained S-polarized component image and a polarization direction is determined as a ratio of them. The component light intensities and the polarization directions are determined from images obtained by imaging of the light scattering entities in a state where static stress is not applied to the object to the inspected and in a state where static load is applied thereto so as to generate tensional stress on the side irradiated by light. The component light intensities and the polarization directions are compared with predetermined threshold values.